CFET + GaN (Complementary FET with Gallium Nitride channels)
CFET + GaN (Complementary FET with Gallium Nitride channels) is a forward-looking combination of vertical transistor stacking and ultra-wide-bandgap semiconductors designed to merge logic density with extreme switching speed and efficiency. While it’s still largely in the research and prototyping phase, there are several published and demonstrated examples from major semiconductor R&D groups and labs…
